"A 40-nm, 64-Kb, 56.67 TOPS/W Voltage-Sensing Computing-In-Memory/Digital ..."

Jong-Hyeok Yoon et al. (2022)

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DOI: 10.1109/JSSC.2021.3101209

access: closed

type: Journal Article

metadata version: 2022-01-08

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Jong-Hyeok Yoon, Muya Chang, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury:
A 40-nm, 64-Kb, 56.67 TOPS/W Voltage-Sensing Computing-In-Memory/Digital RRAM Macro Supporting Iterative Write With Verification and Online Read-Disturb Detection. IEEE J. Solid State Circuits 57(1): 68-79 (2022)

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