"A circuit technology for a self-refresh 16 Mb DRAM with less than 0.5 ..."

Hiroyuki Yamauchi et al. (1995)

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DOI: 10.1109/4.475704

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type: Journal Article

metadata version: 2024-05-07

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Hiroyuki Yamauchi, Tom Iwata, Akito Uno, Masanori Fukumoto, Tsutomu Fujita:
A circuit technology for a self-refresh 16 Mb DRAM with less than 0.5 μA/MB data-retention current. IEEE J. Solid State Circuits 30(11): 1174-1182 (1995)

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