"A 30% Efficient High-Output Voltage Fully Integrated Self-Biased Gate RF ..."

Ziyue Xu et al. (2022)

> Home

Details and statistics

DOI: 10.1109/JSSC.2022.3180633

access: closed

type: Journal Article

metadata version: 2022-12-07

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/jssc/XuKMNDOSCS22
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/jssc/XuKMNDOSCS22
Ziyue Xu, Adam Khalifa, Ankit Mittal, Mehdi Nasrollahpourmotlaghzanjani, Diptashree Das, Marvin Onabajo, Nian Xiang Sun, Sydney S. Cash, Aatmesh Shrivastava:
A 30% Efficient High-Output Voltage Fully Integrated Self-Biased Gate RF Rectifier Topology for Neural Implants. IEEE J. Solid State Circuits 57(11): 3324-3335 (2022)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.