"A 4.0 GHz 291 Mb Voltage-Scalable SRAM Design in a 32 nm High-k + ..."

Yih Wang et al. (2010)

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DOI: 10.1109/JSSC.2009.2034082

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type: Journal Article

metadata version: 2024-04-26

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Yih Wang, Uddalak Bhattacharya, Fatih Hamzaoglu, Pramod Kolar, Yong-Gee Ng, Liqiong Wei, Ying Zhang, Kevin Zhang, Mark Bohr:
A 4.0 GHz 291 Mb Voltage-Scalable SRAM Design in a 32 nm High-k + Metal-Gate CMOS Technology With Integrated Power Management. IEEE J. Solid State Circuits 45(1): 103-110 (2010)

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