"A 10 nm FinFET 128 Mb SRAM With Assist Adjustment System for Power, ..."

Taejoong Song et al. (2017)

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DOI: 10.1109/JSSC.2016.2609386

access: closed

type: Journal Article

metadata version: 2024-10-06

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Taejoong Song, Woojin Rim, Sunghyun Park, Yongho Kim, Giyong Yang, Hoonki Kim, Sanghoon Baek, Jonghoon Jung, Bongjae Kwon, Sungwee Cho, Hyuntaek Jung, Yongjae Choo, Jaeseung Choi:
A 10 nm FinFET 128 Mb SRAM With Assist Adjustment System for Power, Performance, and Area Optimization. IEEE J. Solid State Circuits 52(1): 240-249 (2017)

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