"A 1.1 V 2y-nm 4.35 Gb/s/pin 8 Gb LPDDR4 Mobile Device With Bandwidth ..."

Keunsoo Song et al. (2015)

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DOI: 10.1109/JSSC.2015.2429588

access: closed

type: Journal Article

metadata version: 2020-08-30

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Keunsoo Song, Sangkwon Lee, Dongkyun Kim, Youngbo Shim, Sangil Park, Bokrim Ko, Duckhwa Hong, Yongsuk Joo, Wooyoung Lee, Yongdeok Cho, Wooyeol Shin, Jaewoong Yun, Hyengouk Lee, Jeonghun Lee, Eunryeong Lee, Namkyu Jang, Jaemo Yang, Haekang Jung, Joohwan Cho, Hyeongon Kim, Jinkook Kim:
A 1.1 V 2y-nm 4.35 Gb/s/pin 8 Gb LPDDR4 Mobile Device With Bandwidth Improvement Techniques. IEEE J. Solid State Circuits 50(8): 1945-1959 (2015)

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