"Field Tolerant Dynamic Intrinsic Chip ID Using 32 nm High-K/Metal Gate SOI ..."

Sami Rosenblatt et al. (2013)

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DOI: 10.1109/JSSC.2013.2239134

access: closed

type: Journal Article

metadata version: 2020-08-30

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Sami Rosenblatt, Daniel Fainstein, Alberto Cestero, John Safran, Norman Robson, Toshiaki Kirihata, Subramanian S. Iyer:
Field Tolerant Dynamic Intrinsic Chip ID Using 32 nm High-K/Metal Gate SOI Embedded DRAM. IEEE J. Solid State Circuits 48(4): 940-947 (2013)

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