"Memory design using a one-transistor gain cell on SOI."

Takashi Ohsawa et al. (2002)

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DOI: 10.1109/JSSC.2002.802359

access: closed

type: Journal Article

metadata version: 2022-04-09

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Takashi Ohsawa, Katsuyuki Fujita, Tomoki Higashi, Yoshihisa Iwata, Takeshi Kajiyama, Yoshiaki Asao, Kazumasa Sunouchi:
Memory design using a one-transistor gain cell on SOI. IEEE J. Solid State Circuits 37(11): 1510-1522 (2002)

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