"A 130.7-mm² 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology."

Tz-Yi Liu et al. (2014)

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DOI: 10.1109/JSSC.2013.2280296

access: closed

type: Journal Article

metadata version: 2020-08-30

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Tz-Yi Liu, Tian Hong Yan, Roy Scheuerlein, Yingchang Chen, Jeffrey KoonYee Lee, Gopinath Balakrishnan, Gordon Yee, Henry Zhang, Alex Yap, Jingwen Ouyang, Takahiko Sasaki, Ali Al-Shamma, Chin-Yu Chen, Mayank Gupta, Greg Hilton, Achal Kathuria, Vincent Lai, Masahide Matsumoto, Anurag Nigam, Anil Pai, Jayesh Pakhale, Chang Hua Siau, Xiaoxia Wu, Yibo Yin, Nicolas Nagel, Yoichiro Tanaka, Masaaki Higashitani, Tim Minvielle, Chandu Gorla, Takayuki Tsukamoto, Takeshi Yamaguchi, Mutsumi Okajima, Takayuki Okamura, Satoru Takase, Hirofumi Inoue, Luca Fasoli:
A 130.7-mm² 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology. IEEE J. Solid State Circuits 49(1): 140-153 (2014)

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