"Two-Direction In-Memory Computing Based on 10T SRAM With Horizontal and ..."

Zhiting Lin et al. (2021)

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DOI: 10.1109/JSSC.2021.3061260

access: closed

type: Journal Article

metadata version: 2021-09-16

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Zhiting Lin, Zhiyong Zhu, Honglan Zhan, Chunyu Peng, Xiulong Wu, Yuan Yao, Jianchao Niu, Junning Chen:
Two-Direction In-Memory Computing Based on 10T SRAM With Horizontal and Vertical Decoupled Read Ports. IEEE J. Solid State Circuits 56(9): 2832-2844 (2021)

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