"5.6 Mb/mm2 1R1W 8T SRAM Arrays Operating Down to 560 mV ..."

Jaydeep P. Kulkarni et al. (2017)

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DOI: 10.1109/JSSC.2016.2607219

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type: Journal Article

metadata version: 2024-04-26

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Jaydeep P. Kulkarni, John Keane, Kyung-Hoae Koo, Satyanand Nalam, Zheng Guo, Eric Karl, Kevin Zhang:
5.6 Mb/mm² 1R1W 8T SRAM Arrays Operating Down to 560 mV Utilizing Small-Signal Sensing With Charge Shared Bitline and Asymmetric Sense Amplifier in 14 nm FinFET CMOS Technology. IEEE J. Solid State Circuits 52(1): 229-239 (2017)

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