"A 0.6 V, 1.5 GHz 84 Mb SRAM in 14 nm FinFET CMOS Technology With ..."

Eric Karl et al. (2016)

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DOI: 10.1109/JSSC.2015.2461592

access: closed

type: Journal Article

metadata version: 2024-04-26

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Eric Karl, Zheng Guo, James W. Conary, Jeffrey L. Miller, Yong-Gee Ng, Satyanand Nalam, Daeyeon Kim, John Keane, Xiaofei Wang, Uddalak Bhattacharya, Kevin Zhang:
A 0.6 V, 1.5 GHz 84 Mb SRAM in 14 nm FinFET CMOS Technology With Capacitive Charge-Sharing Write Assist Circuitry. IEEE J. Solid State Circuits 51(1): 222-229 (2016)

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