"A 1-Gb SDRAM with ground-level precharged bit line and nonboosted 2.1-V ..."

Satoshi Eto et al. (1998)

> Home

Details and statistics

DOI: 10.1109/4.726562

access: closed

type: Journal Article

metadata version: 2022-07-05

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/jssc/EtoMTINKKKIKHSI98
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/jssc/EtoMTINKKKIKHSI98
Satoshi Eto, Masato Matsumiya, Masato Takita, Yuki Ishii, Toshikazu Nakamura, Kuninori Kawabata, Hideki Kano, Ayako Kitamoto, Toshimi Ikeda, Toru Koga, Mitsuhiro Higashiho, Yuji Serizawa, Kazuo Itabashi, Osamu Tsuboi, Yuji Yokoyama, Masao Taguchi:
A 1-Gb SDRAM with ground-level precharged bit line and nonboosted 2.1-V word line. IEEE J. Solid State Circuits 33(11): 1697-1702 (1998)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.