"A 130 nm 1.2 V/3.3 V 16 Kb Spin-Transfer Torque Random Access Memory With ..."

Yiran Chen et al. (2012)

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DOI: 10.1109/JSSC.2011.2170778

access: closed

type: Journal Article

metadata version: 2022-07-04

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Yiran Chen, Hai Li, Xiaobin Wang, Wenzhong Zhu, Wei Xu, Tong Zhang:
A 130 nm 1.2 V/3.3 V 16 Kb Spin-Transfer Torque Random Access Memory With Nondestructive Self-Reference Sensing Scheme. IEEE J. Solid State Circuits 47(2): 560-573 (2012)

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