"A 130 mV SRAM With Expanded Write and Read Margins for Subthreshold ..."

Meng-Fan Chang et al. (2011)

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DOI: 10.1109/JSSC.2010.2091321

access: closed

type: Journal Article

metadata version: 2020-08-30

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Meng-Fan Chang, Shi-Wei Chang, Po-Wei Chou, Wei-Cheng Wu:
A 130 mV SRAM With Expanded Write and Read Margins for Subthreshold Applications. IEEE J. Solid State Circuits 46(2): 520-529 (2011)

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