"High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power ..."

Jiongjiong Mo et al. (2017)

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DOI: 10.1155/2017/4078240

access: open

type: Journal Article

metadata version: 2025-01-06

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Jiongjiong Mo, Hua Chen, Zhiyu Wang, Fa-Xin Yu:
High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power Application. J. Sensors 2017: 4078240:1-4078240:9 (2017)

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