"Study and Reduction of Variability in 28 nm Fully Depleted Silicon on ..."

Zhaopeng Wei et al. (2016)

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DOI: 10.1166/JOLPE.2016.1421

access: closed

type: Journal Article

metadata version: 2020-05-22

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  - https://dblp.org/rec/journals/jolpe/WeiJLHFL16
Zhaopeng Wei, Gilles Jacquemod, Philippe Lorenzini, Frédéric Hameau, Emeric de Foucauld, Yves Leduc:
Study and Reduction of Variability in 28 nm Fully Depleted Silicon on Insulator Technology. J. Low Power Electron. 12(1): 64-73 (2016)

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