"Effect of Channel Thickness and Doping Concentration on Sub-Threshold ..."

Sanjit Kumar Swain et al. (2015)

> Home

Details and statistics

DOI: 10.1166/JOLPE.2015.1395

access: closed

type: Journal Article

metadata version: 2022-10-02

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/jolpe/SwainASPS15
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/jolpe/SwainASPS15
Sanjit Kumar Swain, Sarosij Adak, Bikash Sharma, Sudhansu Kumar Pati, Chandan Kumar Sarkar:
Effect of Channel Thickness and Doping Concentration on Sub-Threshold Performance of Graded Channel and Gate Stack DG MOSFETs. J. Low Power Electron. 11(3): 366-372 (2015)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.