"Gate Sizing and Vt Assignment for Active-Mode Leakage Power Reduction."

Feng Gao, John P. Hayes (2006)

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DOI: 10.1166/JOLPE.2006.056

access: closed

type: Journal Article

metadata version: 2023-03-09

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Feng Gao, John P. Hayes:
Gate Sizing and Vt Assignment for Active-Mode Leakage Power Reduction. J. Low Power Electron. 2(2): 230-239 (2006)

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