"Variability Characterisation of Nanoscale Si and InGaAs Fin ..."

Guillermo Indalecio Fernández et al. (2015)

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DOI: 10.1166/JOLPE.2015.1371

access: closed

type: Journal Article

metadata version: 2020-05-22

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Guillermo Indalecio Fernández, Natalia Seoane, Manuel Aldegunde, Karol Kalna, Antonio J. García-Loureiro:
Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold. J. Low Power Electron. 11(2): 256-262 (2015)

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