"Enhanced resistive switching characteries in HfOx memory devices by ..."

Qiaozhen Zhou et al. (2023)

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DOI: 10.3233/JIFS-232028

access: closed

type: Journal Article

metadata version: 2023-08-31

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Qiaozhen Zhou, Fang Wang, Xuanyu Zhao, Kai Hu, Yujian Zhang, Xin Shan, Xin Lin, Yupeng Zhang, Ke Shan, Kailiang Zhang:
Enhanced resistive switching characteries in HfOx memory devices by embedding W nanoparticles. J. Intell. Fuzzy Syst. 45(3): 5159-5167 (2023)

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