"Recovering doping profiles in semiconductor devices with the ..."

Yingda Cheng, Irene M. Gamba, Kui Ren (2011)

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DOI: 10.1016/J.JCP.2011.01.034

access: closed

type: Journal Article

metadata version: 2020-09-05

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Yingda Cheng, Irene M. Gamba, Kui Ren:
Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model. J. Comput. Phys. 230(9): 3391-3412 (2011)

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