"A robust 12T SRAM cell with improved write margin for ultra-low power ..."

Jaeyoung Kim, Pinaki Mazumder (2017)

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DOI: 10.1016/J.VLSI.2016.09.008

access: closed

type: Journal Article

metadata version: 2020-02-20

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Jaeyoung Kim, Pinaki Mazumder:
A robust 12T SRAM cell with improved write margin for ultra-low power applications in 40 nm CMOS. Integr. 57: 1-10 (2017)

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