"A new write assist technique for SRAM design in 65 nm CMOS technology."

Hooman Farkhani, Ali Peiravi, Farshad Moradi (2015)

> Home

Details and statistics

DOI: 10.1016/J.VLSI.2015.01.001

access: closed

type: Journal Article

metadata version: 2020-02-20

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/integration/FarkhaniPM15
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/integration/FarkhaniPM15
Hooman Farkhani, Ali Peiravi, Farshad Moradi:
A new write assist technique for SRAM design in 65 nm CMOS technology. Integr. 50: 16-27 (2015)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.