"Design and characterisation of a new GaN/AlGaN HEMT transistor."

Naji Guedri, Naoufel Ismail, Rached Gharbi (2021)

> Home

Details and statistics

DOI: 10.1504/IJMIC.2021.123379

access: closed

type: Journal Article

metadata version: 2023-09-30

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/ijmic/GuedriIG21
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/ijmic/GuedriIG21
Naji Guedri, Naoufel Ismail, Rached Gharbi:
Design and characterisation of a new GaN/AlGaN HEMT transistor. Int. J. Model. Identif. Control. 38(3/4): 302-311 (2021)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.