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ORCID"Low-leakage sub-threshold 9 T-SRAM cell in 14-nm FinFET technology."
Behzad Zeinali et al. (2017)
- Behzad Zeinali
, Jens Kargaard Madsen, Praveen Raghavan, Farshad Moradi:
Low-leakage sub-threshold 9 T-SRAM cell in 14-nm FinFET technology. Int. J. Circuit Theory Appl. 45(11): 1647-1659 (2017)
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