"An E band MMIC power amplifier design using 100 nm T-Gate GaN HEMT on SiC."

Liwei Jin et al. (2024)

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DOI: 10.1002/CTA.3941

access: closed

type: Journal Article

metadata version: 2024-08-22

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Liwei Jin, Zhiqun Cheng, Yonghui Wang, Guohua Liu:
An E band MMIC power amplifier design using 100 nm T-Gate GaN HEMT on SiC. Int. J. Circuit Theory Appl. 52(8): 4129-4139 (2024)

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