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"A novel efficiency-enhancement topology: GaN high-electron mobility ..."

Kefeng Han (2018)

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DOI: 10.1002/CTA.2453

access: closed

type: Journal Article

metadata version: 2020-05-11

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Kefeng Han:
A novel efficiency-enhancement topology: GaN high-electron mobility transistors with waveform-modulation structure composed of Schottky diodes. Int. J. Circuit Theory Appl. 46(5): 1101-1110 (2018)

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