"A low-leakage single-bitline 9T SRAM cell with read-disturbance removal ..."

Erfan Abbasian, Morteza Gholipour (2022)

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DOI: 10.1002/CTA.3231

access: closed

type: Journal Article

metadata version: 2022-06-02

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Erfan Abbasian, Morteza Gholipour:
A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applications. Int. J. Circuit Theory Appl. 50(5): 1537-1556 (2022)

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