"Analytical model for uniaxial strained Si inversion layer electron ..."

Xiaoyan Wang, Xiaobo Xu, Huifeng Wang (2019)

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DOI: 10.1049/IET-CDS.2018.5170

access: closed

type: Journal Article

metadata version: 2020-09-10

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Xiaoyan Wang, Xiaobo Xu, Huifeng Wang:
Analytical model for uniaxial strained Si inversion layer electron effective mobility. IET Circuits Devices Syst. 13(3): 414-419 (2019)

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