"Single and double-gate based AlGaN/GaN MOS-HEMTs for the design of ..."

Deepak Kumar Panda et al. (2020)

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DOI: 10.1049/IET-CDS.2020.0015

access: closed

type: Journal Article

metadata version: 2022-10-02

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Deepak Kumar Panda, Rajan Singh, Trupti Ranjan Lenka, Thi Tan Pham, Ravi Teja Velpula, Barsha Jain, Ha Quoc Thang Bui, Hieu Pham Trung Nguyen:
Single and double-gate based AlGaN/GaN MOS-HEMTs for the design of low-noise amplifiers: a comparative study. IET Circuits Devices Syst. 14(7): 1018-1025 (2020)

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