"In-depth analysis of the static behaviour of a SiC MOSFET and of its ..."

Wadia Jouha et al. (2020)

> Home

Details and statistics

DOI: 10.1049/IET-CDS.2018.5509

access: closed

type: Journal Article

metadata version: 2020-09-10

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/iet-cds/JouhaODMJ20
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/iet-cds/JouhaODMJ20
Wadia Jouha, Ahmed El Oualkadi, Pascal Dherbécourt, Mohamed Masmoudi, Eric Joubert:
In-depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation. IET Circuits Devices Syst. 14(2): 222-228 (2020)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.