"In-Situ N2-Plasma Nitridation for High-k HfN Gate ..."

Shun'ichiro Ohmi et al. (2020)

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DOI: 10.1587/TRANSELE.2019FUP0001

access: closed

type: Journal Article

metadata version: 2021-01-18

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  - https://dblp.org/rec/journals/ieicetc/OhmiIHK20
Shun'ichiro Ohmi, Shin Ishimatsu, Yuske Horiuchi, Sohya Kudoh:
In-Situ N₂-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering. IEICE Trans. Electron. 103-C(6): 299-303 (2020)

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