"Reduced Peripheral Leakage Current in Pin Photodetectors of Ge on ..."

Koji Abe et al. (2024)

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DOI: 10.1587/TRANSELE.2023FUS0001

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type: Journal Article

metadata version: 2024-09-05

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Koji Abe, Mikiya Kuzutani, Satoki Furuya, Jose A. Piedra-Lorenzana, Takeshi Hizawa, Yasuhiko Ishikawa:
Reduced Peripheral Leakage Current in Pin Photodetectors of Ge on n⁺-Si by P⁺ Implantation to Compensate Surface Holes. IEICE Trans. Electron. 107(9): 237-240 (2024)

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