"E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology."

Issei Watanabe et al. (2010)

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DOI: 10.1587/TRANSELE.E93.C.1251

access: closed

type: Journal Article

metadata version: 2020-04-11

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  - https://dblp.org/rec/journals/ieicet/WatanabeEMM10
Issei Watanabe, Akira Endoh, Takashi Mimura, Toshiaki Matsui:
E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology. IEICE Trans. Electron. 93-C(8): 1251-1257 (2010)

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