"A 50 ns Verify Speed in Resistive Random Access Memory by Using a Write ..."

Shyh-Shyuan Sheu et al. (2012)

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DOI: 10.1587/TRANSELE.E95.C.1128

access: closed

type: Journal Article

metadata version: 2020-04-11

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  - https://dblp.org/rec/journals/ieicet/SheuCCCTL12
Shyh-Shyuan Sheu, Kuo-Hsing Cheng, Yu-Sheng Chen, Pang-Shiu Chen, Ming-Jinn Tsai, Yu-Lung Lo:
A 50 ns Verify Speed in Resistive Random Access Memory by Using a Write Resistance Tracking Circuit. IEICE Trans. Electron. 95-C(6): 1128-1131 (2012)

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