"Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate."

Hideki Murakami et al. (2005)

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DOI: 10.1093/IETELE/E88-C.4.646

access: closed

type: Journal Article

metadata version: 2020-04-11

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Hideki Murakami, Yoshikazu Moriwaki, Masafumi Fujitake, Daisuke Azuma, Seiichiro Higashi, Seiichi Miyazaki:
Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate. IEICE Trans. Electron. 88-C(4): 646-650 (2005)

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