"A 28-nm 484-fJ/writecycle 650-fJ/readcycle 8T Three-Port FD-SOI SRAM for ..."

Haruki Mori et al. (2016)

Details and statistics

DOI: 10.1587/TRANSELE.E99.C.901

access: closed

type: Journal Article

metadata version: 2024-03-11

a service of  Schloss Dagstuhl - Leibniz Center for Informatics