"4.5-/4.9-GHz-Band Selective High-Efficiency GaN HEMT Power Amplifier by ..."

Kazuki Mashimo, Ryo Ishikawa, Kazuhiko Honjo (2018)

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DOI: 10.1587/TRANSELE.E101.C.751

access: closed

type: Journal Article

metadata version: 2020-04-11

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Kazuki Mashimo, Ryo Ishikawa, Kazuhiko Honjo:
4.5-/4.9-GHz-Band Selective High-Efficiency GaN HEMT Power Amplifier by Characteristic Impedance Switching. IEICE Trans. Electron. 101-C(10): 751-758 (2018)

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