"Comparative Analysis of Bandgap-Engineered Pillar Type Flash Memory with ..."

Sang-Youl Lee et al. (2012)

> Home

Details and statistics

DOI: 10.1587/TRANSELE.E95.C.831

access: closed

type: Journal Article

metadata version: 2023-01-18

- view
  authority control:
- export record
  dblp key:
  - journals/ieicet/LeeYOYJKLL12
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/ieicet/LeeYOYJKLL12
Sang-Youl Lee, Seung-Dong Yang, Jae-Sub Oh, Ho-Jin Yun, Kwang-Seok Jeong, Yu-Mi Kim, Hi-Deok Lee, Ga-Won Lee:
Comparative Analysis of Bandgap-Engineered Pillar Type Flash Memory with HfO₂ and S₃N₄ as Trapping Layer. IEICE Trans. Electron. 95-C(5): 831-836 (2012)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.