"Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer."

Masafumi Ito et al. (2008)

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DOI: 10.1093/IETELE/E91-C.7.989

access: closed

type: Journal Article

metadata version: 2020-04-11

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Masafumi Ito, Shigeru Kishimoto, Fumihiko Nakamura, Takashi Mizutani:
Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer. IEICE Trans. Electron. 91-C(7): 989-993 (2008)

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