"2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface ..."

Yusuke Ikawa et al. (2010)

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DOI: 10.1587/TRANSELE.E93.C.1218

access: closed

type: Journal Article

metadata version: 2020-04-11

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  - https://dblp.org/rec/journals/ieicet/IkawaYHAO10
Yusuke Ikawa, Yorihide Yuasa, Cheng-Yu Hu, Jin-Ping Ao, Yasuo Ohno:
2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection. IEICE Trans. Electron. 93-C(8): 1218-1224 (2010)

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