"Control of Interfacial Reaction of HfO2/Ge Structure by ..."

Kuniaki Hashimoto et al. (2013)

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DOI: 10.1587/TRANSELE.E96.C.674

access: closed

type: Journal Article

metadata version: 2020-04-11

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  - https://dblp.org/rec/journals/ieicet/HashimotoOMHM13
Kuniaki Hashimoto, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki:
Control of Interfacial Reaction of HfO₂/Ge Structure by Insertion of Ta Oxide Layer. IEICE Trans. Electron. 96-C(5): 674-679 (2013)

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