"Physical mechanism study of N-well doping effects on the single-event ..."

Qiang Zhao et al. (2019)

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DOI: 10.1587/ELEX.16.20190407

access: open

type: Journal Article

metadata version: 2023-09-30

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Qiang Zhao, Chunyu Peng, Changyong Liu, Xiulong Wu:
Physical mechanism study of N-well doping effects on the single-event transient characteristic of PMOS. IEICE Electron. Express 16(17): 20190407 (2019)

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