"SiC trench MOSFET with integrated side-wall Schottky barrier diode having ..."

Bo Yi et al. (2019)

> Home

Details and statistics

DOI: 10.1587/ELEX.16.20181135

access: open

type: Journal Article

metadata version: 2021-02-12

- view
  - electronic edition via DOI (open access)
  authority control:
- export record
  dblp key:
  - journals/ieiceee/YiHLCHK19
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/ieiceee/YiHLCHK19
Bo Yi, Hao Hu, Jia Lin, Junji Cheng, Haimeng Huang, MouFu Kong:
SiC trench MOSFET with integrated side-wall Schottky barrier diode having P⁺ electric field shield. IEICE Electron. Express 16(5): 20181135 (2019)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.