"Characteristics of SiN/GaAs interface under exposure to high-temperature ..."

Hajime Sasaki et al. (2012)

> Home

Details and statistics

DOI: 10.1587/ELEX.9.1592

access: open

type: Journal Article

metadata version: 2022-10-02

- view
  - electronic edition via DOI (open access)
  authority control:
- export record
  dblp key:
  - journals/ieiceee/SasakiHKTF12
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/ieiceee/SasakiHKTF12
Hajime Sasaki, Takayuki Hisaka, Kaoru Kadoiwa, Yoshikazu Terai, Yasufumi Fujiwara:
Characteristics of SiN/GaAs interface under exposure to high-temperature and high-humidity conditions measured by photoreflectance spectroscopy. IEICE Electron. Express 9(20): 1592-1597 (2012)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.