"Lifetime prediction of power MOSFET based on LSTM with successive ..."

Hongyu Ren et al. (2023)

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DOI: 10.1587/ELEX.20.20230277

access: open

type: Journal Article

metadata version: 2024-01-01

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  - https://dblp.org/rec/journals/ieiceee/RenYLZD23
Hongyu Ren, Yaoyi Yu, Junliang Liu, Junjie Zhou, Xiong Du:
Lifetime prediction of power MOSFET based on LSTM with successive variational mode decomposition and error compensation. IEICE Electron. Express 20(16): 20230277 (2023)

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