"High-speed gate drive circuit for SiC MOSFET by GaN HEMT."

Kohei Nagaoka et al. (2015)

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DOI: 10.1587/ELEX.12.20150285

access: open

type: Journal Article

metadata version: 2021-02-12

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  - https://dblp.org/rec/journals/ieiceee/NagaokaCYNH15
Kohei Nagaoka, Kentaro Chikamatsu, Atsushi Yamaguchi, Ken Nakahara, Takashi Hikihara:
High-speed gate drive circuit for SiC MOSFET by GaN HEMT. IEICE Electron. Express 12(11): 20150285 (2015)

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