


default search action
"The characteristics of fluorinated gate dielectric AlGaN/GaN MIS-HEMT."
Minhan Mi et al. (2015)
- Minhan Mi, Yunlong He, Bin Hou
, Meng Zhang, Zuo-Chen Shi, Xiaohua Ma, Peixian Li, Yue Hao:
The characteristics of fluorinated gate dielectric AlGaN/GaN MIS-HEMT. IEICE Electron. Express 12(24): 20150943 (2015)

manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.