"Reversible nonvolatile and threshold switching characteristics in ..."

Chandreswar Mahata et al. (2019)

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DOI: 10.1587/ELEX.16.20190404

access: open

type: Journal Article

metadata version: 2021-02-12

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  - https://dblp.org/rec/journals/ieiceee/MahataKKIKKP19
Chandreswar Mahata, Wonwoo Kim, Shiwhan Kim, Muhammad Ismail, Min-Hwi Kim, Sungjun Kim, Byung-Gook Park:
Reversible nonvolatile and threshold switching characteristics in Cu/high-k/Si devices. IEICE Electron. Express 16(16): 20190404 (2019)

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